| 摘要 |
A method of detecting post exposure bake endpoint during processing of a semiconductor substrate. The method includes providing a radiation source coupled to a post exposure bake station and providing a radiation detector coupled to the post exposure bake station. The method also includes directing a radiation signal generated by the radiation source through an absorption region coupled to the substrate. The method further includes measuring a first detected signal at the radiation detector, measuring a second detected signal at the radiation detector, and comparing the first detected signal and the second detected signal to determine the post exposure bake endpoint.
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