发明名称 |
Method for fabricating semiconductor device |
摘要 |
The method for fabricating the semiconductor device comprises the step of forming an insulating film 14 having an opening 18; the step of forming an organic resist film 20 a; the step of forming over the organic resist film 20 a a mask film 20 b having etching characteristics different from those of the organic resist film 20 a; the step of forming an opening in the mask film 20 b; and the step of etching the organic resist film 20 a with the mask film 20 b as the mask. In the step of etching the organic resist film, the organic resist film 20 a is etched with a mixed gas of nitrogen gas and oxygen gas.
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申请公布号 |
US2006134909(A1) |
申请公布日期 |
2006.06.22 |
申请号 |
US20040816959 |
申请日期 |
2004.04.05 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAGASE KUNIHIKO;HASEGAWA AKIHIRO |
分类号 |
G03F7/40;H01L21/4763;H01L21/027;H01L21/3065;H01L21/311;H01L21/768 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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