发明名称 Manufacturing method of substrate having conductive layer and manufacturing method of semiconductor device
摘要 The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer, forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
申请公布号 US2006134918(A1) 申请公布日期 2006.06.22
申请号 US20050295471 申请日期 2005.12.07
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 FUJII GEN;MORISUE MASAFUMI;SHOJI HIRONOBU;MARUYAMA JUNYA;DAIRIKI KOUJI;AOKI TOMOYUKI
分类号 H01L21/311;H01L21/302 主分类号 H01L21/311
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