发明名称 INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING
摘要 A semiconductor structure (5), fluid ejection device, and methods for manufacturing the same are provided, such that a contact to a substrate (10) is formed from a conductive layer (30).
申请公布号 WO2006036751(A3) 申请公布日期 2006.06.22
申请号 WO2005US34030 申请日期 2005.09.21
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;DODD, SIMON;WANG, S. JONATHAN;TOM, DENNIS W.;BRYANT, FRANK R.;MCMAHON, TERRY E.;MILLER, RICHARD TODD;HINDMAN, GREGORY T. 发明人 DODD, SIMON;WANG, S. JONATHAN;TOM, DENNIS W.;BRYANT, FRANK R.;MCMAHON, TERRY E.;MILLER, RICHARD TODD;HINDMAN, GREGORY T.
分类号 B41J2/14;B41J2/16;H01L23/31 主分类号 B41J2/14
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