Thin film transistor array panel and manufacturing method thereof

摘要

A thin film transistor (TFT) array panel is presented. The TFT array panel includes: a gate line formed on an insulating substrate and a gate electrode; a storage electrode line on the insulating substrate; a gate insulating layer on the gate line and the storage electrode line; a first semiconductor on the gate insulating layer; a data line and a drain electrode formed on the first semiconductor, separate from each other, and over the gate electrode; a passivation layer formed on the first semiconductor layer and having a contact hole exposing the drain electrode and an opening exposing the gate insulating layer on the storage electrode; and a pixel electrode connected to the drain electrode through the contact hole and overlapping the storage electrode through the opening.