发明名称 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR SUBSTRATE
摘要 <p>A semiconductor substrate (1) of the present invention is made of nitrides of group III metals having wurtzite crystal structure and is grown in vapor phase either on a (0001) oriented foreign substrate (2), lattice mismatched to the semiconductor substrate materials, or on existing (0001) oriented highly dislocated layer (3) of the semiconductor substrate materials and has a highly reduced dislocation density. According to the present invention, a structure is utilized for the dislocation density reduction, which comprises a dislocation redirection layer (4) providing intentional inclination of threading dislocations (6) towards high index crystallographic planes having crystallographic indexes other than (0001) and those of the type {1100}, in order to enhance the probability for dislocation reactions; and a dislocation reaction layer (5) positioned above said dislocation layer (4), in which the threading dislocations (6) coalesce with each other resulting in reduced threading dislocation density at the semiconductor substrate surface (7).</p>
申请公布号 WO2006064081(A1) 申请公布日期 2006.06.22
申请号 WO2005FI00233 申请日期 2005.05.19
申请人 OPTOGAN OY;ODNOBLYUDOV, MAXIM;BOUGROV, VLADISLAV;ROMANOV, ALEXEI;LANG, TEEMU 发明人 ODNOBLYUDOV, MAXIM;BOUGROV, VLADISLAV;ROMANOV, ALEXEI;LANG, TEEMU
分类号 H01L21/205;H01L;H01L21/20;H01L29/04;H01L29/20 主分类号 H01L21/205
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