| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing cloth for CMP processing, a CMP device and a method for manufacturing a semiconductor device, wherein a change of a thickness of a polishing layer can be monitored in a wafer polishing or dress process. <P>SOLUTION: The polishing cloth for CMP processing (hereinafter referred to as the polishing cloth) 10 is stuck on the polishing disc T1 of the CMP device for rotation. The polishing cloth 10 is configured by stacking an adhesive layer 11, a cushion layer 12, an adhesive layer 13, and a polishing layer 14 sequentially. The polishing cloth 10 is formed with a first pattern 141 for retaining slurry in addition to a second pattern 142 for monitoring a thickness of the polishing layer, in the uppermost polishing layer 14. The first pattern 141 has a pattern of a trench or hole which holds an equivalent planar shape even if a thickness of the polishing layer 14 changes. The second pattern 142 has a taper pattern of a trench or hole in which a planar shape reduces as a thickness of the polishing layer 14 decreases. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
