| 摘要 |
A method of manufacturing an integrated circuit element from a silicon wafer, the silicon wafer having an active face and an inactive face, a passivation layer being deposited on the active face, where the method includes: an organic-layer-depositing step, in which an organic layer is deposited on the inactive face of the silicon wafer using a spin coating technique to obtain a sandwich-like structure, the passivation layer and the organic layer having substantially the same thickness, and a wafer-sawing step, in which a slice of the silicon wafer is sawed so as to obtain a several integrated circuit elements.
|
