| 摘要 |
A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of Schottky-barrier-diode units 10 is formed on an SiC chip 9 , and each of the units 10 has an external output electrode 4 independently of each other. Bumps 11 (the diameter is from several tens to several hundreds of mum) are formed only on the external output electrodes 4 of non-defective units among the units 10 formed on the SiC chip 9 , meanwhile bumps are not formed on the external output electrodes 4 of defective units in which the withstand voltage is too low, or the leakage current is too much. Because the bumps are not formed on the defective units, Schottky-barrier-side electrodes 3 are connected in parallel to the exterior of the device through the bumps 11 , and a wiring layer 13 and an external lead 13 a of a wiring substrate 12 ; thus, only the external output electrodes 4 of the non-defective units 10 are connected in parallel with each other.
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