DYNAMIC THRESHOLD VOLTAGE MOS AND NON-VOLATILE MEMORY STRUCTURE FOR 2-BITS CELL OPERATION WITH ASYMMETRICAL GATE DIELECTRIC THICKNESS AND DUAL GATE WORK FUNCTION AND ITS MANUFACTURING
摘要
申请公布号
KR20060068038(A)
申请公布日期
2006.06.21
申请号
KR20040105961
申请日期
2004.12.15
申请人
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
