| 摘要 |
<p>A non-volatile memory device (100) is proposed. The non-volatile memory device includes a chip (105) of semiconductor material. The chip includes a memory (202) and control means (204,210,214) for performing a programming operation (314), an erasing operation (312) and a reading operation (316) on the memory in response to corresponding external commands. The chip further includes testing means (118, 120, 220, 225, 230) for performing at least one test process including the repetition of at least one of said operations by the control means, and a single access element (118) for enabling the testing means.</p> |
