发明名称 |
Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same |
摘要 |
A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000 DEG C and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization. <IMAGE> |
申请公布号 |
EP0788153(B1) |
申请公布日期 |
2006.06.21 |
申请号 |
EP19970101803 |
申请日期 |
1997.02.05 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SASAKI, KAZUTAKA;NAKATA, HIROHIKO;SASAME, AKIRA;KOBAYASHI, MITSUNORI |
分类号 |
H01L23/498;H05K1/09;C04B37/02;C04B41/52;H01L23/15;H05K3/38 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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