发明名称 |
POWER SWITCH STRUCTURE AND METHOD |
摘要 |
<p>In one embodiment, a power switch device ( 33 ) includes a first MOSFET device 41 and a second MOSFET device ( 42 ). A split gate structure ( 84 ) including a first gate electrode ( 48,87 ) controls the first MOSFET device ( 41 ). A second gate electrode ( 49,92 ) controls the second MOSFET device ( 42 ). A current limit device ( 38 ) is coupled to the first gate electrode ( 48,97 ) to turn on the first MOSFET device during a current limit mode. A comparator device ( 36 ) is coupled to the second gate electrode ( 49,92 ) to turn on the second MOSFET device ( 42 ) when the power switch device ( 33 ) is no longer in current limit mode.</p> |
申请公布号 |
EP1671408(A1) |
申请公布日期 |
2006.06.21 |
申请号 |
EP20040784112 |
申请日期 |
2004.09.15 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
ROBB, STEPHEN P.;BRIGGS, DAVID K. |
分类号 |
H02H9/00;H03K17/082;H03K17/16;(IPC1-7):H02H9/00 |
主分类号 |
H02H9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|