发明名称 POWER SWITCH STRUCTURE AND METHOD
摘要 <p>In one embodiment, a power switch device ( 33 ) includes a first MOSFET device 41 and a second MOSFET device ( 42 ). A split gate structure ( 84 ) including a first gate electrode ( 48,87 ) controls the first MOSFET device ( 41 ). A second gate electrode ( 49,92 ) controls the second MOSFET device ( 42 ). A current limit device ( 38 ) is coupled to the first gate electrode ( 48,97 ) to turn on the first MOSFET device during a current limit mode. A comparator device ( 36 ) is coupled to the second gate electrode ( 49,92 ) to turn on the second MOSFET device ( 42 ) when the power switch device ( 33 ) is no longer in current limit mode.</p>
申请公布号 EP1671408(A1) 申请公布日期 2006.06.21
申请号 EP20040784112 申请日期 2004.09.15
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 ROBB, STEPHEN P.;BRIGGS, DAVID K.
分类号 H02H9/00;H03K17/082;H03K17/16;(IPC1-7):H02H9/00 主分类号 H02H9/00
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