发明名称 |
Dopant and its production method |
摘要 |
<p>The method involves using a metal complex as a dopant for doping an organic semiconducting matrix material to vary the electrical properties, whereby the metal complex represents an n-dopant relative to the matrix material, or using a metal complex to produce an electronic component with an electronically functional region containing the metal complex. The metal complex is a neutral electron-rich metal complex. Independent claims are also included for the following: (A) a semiconducting material (B) an organic semiconducting material (C) a method of manufacturing an organic semiconducting material (D) an electronic component (E) a dopant (F) a ligand for a metal complex (G) and the use of a ligand in a process of manufacturing a dopant.</p> |
申请公布号 |
EP1672714(A2) |
申请公布日期 |
2006.06.21 |
申请号 |
EP20060007372 |
申请日期 |
2005.03.03 |
申请人 |
NOVALED AG |
发明人 |
WERNER, ANSGAR;KUEHL, OLAF;GESSLER, SIMON;HARADA, KENTARO;HARTMANN, HORST;GRUESSING, ANDRE;LIMMERT, MICHAEL;LUX, ANDREA |
分类号 |
H01L51/30;C07F5/02;C07F11/00;C09K11/06;H01L51/00;H01L51/50 |
主分类号 |
H01L51/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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