发明名称 |
SEMICONDUCTOR DEVICE FOR EMITTING LIGHT |
摘要 |
<p>A semiconductor device according to the invention for emitting light when a voltage is applied includes a first ( 3 ), a second ( 5 ) and a third active semiconductor region ( 7 A- 7 C). While the conductivity of the first semiconductor region ( 3 ) is based on charge carriers of a first conductivity type, the conductivity of the second semiconductor region ( 5 ) is based on charge carriers of a second conductivity type, which have a charge opposite to the charge carriers of the first conductivity type The active semiconductor region ( 5 13 ) is arranged between the first and the second semiconductor regions ( 3, 5 ). Embedded in the active semiconductor region ( 5 ) are quantum structures ( 13 ) which are made from a semiconductor material which has a direct band gap. In that respect the term quantum structures is used to denote structures which in at least one direction of extent are of a dimension which is so small that the properties of the structure are substantially also determined by quantum-mechanical processes.</p> |
申请公布号 |
EP1671377(A2) |
申请公布日期 |
2006.06.21 |
申请号 |
EP20040787080 |
申请日期 |
2004.09.30 |
申请人 |
HUMBOLDT-UNIVERSITAET ZU BERLIN |
发明人 |
MASSELINK, WILLIAM, TED;HATAMI, FARIBA |
分类号 |
H01L33/06;H01L33/30;H01S5/34;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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