发明名称 |
NON-VOLATILE MEMORY WITH BURIED TRENCH CONTROL GATE AND FABRICATING METHOD THE SAME |
摘要 |
<p>In a non-volatile memory device with a buried control gate, the effective channel length of the control gate is increased to restrain punchthrough, and a region for storing charge is increased for attaining favorably large capacity. A method of fabricating the memory device includes forming the control gate within a trench formed in a semiconductor substrate, and forming charge storing regions in the semiconductor substrate on both sides of the control gate in a self-aligning manner, thereby allowing for multi-level cell operation.</p> |
申请公布号 |
KR100594307(B1) |
申请公布日期 |
2006.06.21 |
申请号 |
KR20040112200 |
申请日期 |
2004.12.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, KI CHUL;BAE, GEUM JONG;CHO, IN WOOK;LEE, BYOUNG JIN;KIM, JIN HEE |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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