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发明名称
Semiconductor device
摘要
In an N-channel type field effect transistor constituting an input/output protection circuit, an N-type well 1 a with a lower dopant concentration than the source region 3 c is formed under the source region 3 c.
申请公布号
US7064392(B1)
申请公布日期
2006.06.20
申请号
US20000621614
申请日期
2000.07.21
申请人
NEC ELECTRONICS CORPORATION
发明人
MORISHITA YASUYUKI
分类号
H01L23/62;H01L27/04;H01L21/822;H01L21/8232;H01L21/8234;H01L21/8238;H01L27/092
主分类号
H01L23/62
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