发明名称 |
Method of forming a multi-layer semiconductor structure having a seamless bonding interface |
摘要 |
A method of forming a multi-layer semiconductor structure includes providing a first layer of a patterned copper bond film having a first predetermined thickness onto a first surface of a first semiconductor. The method further includes providing a second layer of a patterned copper bond film having a second predetermined thickness onto a first surface of a second semiconductor. The first and second semiconductor structures can be aligned, such that the first and second patterned copper bond films are disposed in proximity. A virtually seamless bond can be formed between the first and second patterned copper bond films to provide the first and second semiconductors as the multi-layer semiconductor structure.
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申请公布号 |
US7064055(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20030655670 |
申请日期 |
2003.09.05 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
REIF RAFAEL;FAN ANDY |
分类号 |
H01L21/4763;H01L21/60;H01L23/48;H01L23/522;H01L25/065 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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