| 摘要 |
According to the present invention, there is provided a semiconductor device having: first and second fins formed on a semiconductor substrate to oppose each other, and made of a semiconductor layer; an active region which is formed on the semiconductor substrate so as to be connected to the first and second fins, and supplies a predetermined voltage to the first and second fins; and a gate electrode formed on an insulating film formed on the semiconductor substrate, in a position separated from the active region by a predetermined spacing, so as to cross the first and second fins, wherein in the active region, a predetermined portion between a first portion connected to the first fin and a second portion connected to the second fin is removed.
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