| 发明名称 |
Semiconductor device and method for manufacturing the same |
| 摘要 |
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
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| 申请公布号 |
US7064388(B2) |
申请公布日期 |
2006.06.20 |
| 申请号 |
US20040025344 |
申请日期 |
2004.12.28 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HAYAKAWA MASAHIKO;SAKAMA MITSUNORI;TORIUMI SATOSHI |
| 分类号 |
H01L27/01;H01L21/00;H01L21/20;H01L21/77;H01L27/12;H01L29/786;H01L31/0392 |
主分类号 |
H01L27/01 |
| 代理机构 |
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