发明名称 Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
摘要 A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
申请公布号 US7064078(B2) 申请公布日期 2006.06.20
申请号 US20040768724 申请日期 2004.01.30
申请人 APPLIED MATERIALS 发明人 LIU WEI;HE JIM ZHONGYI;AHN SANG H.;SHEN MEIHUA;M'SAAD HICHEM;YEH WENDY H.;BENCHER CHISTOPHER D.
分类号 H01L21/302;H01L21/027;H01L21/033;H01L21/308;H01L21/314 主分类号 H01L21/302
代理机构 代理人
主权项
地址