发明名称 |
CVD process capable of reducing incubation time |
摘要 |
A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
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申请公布号 |
US7063871(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20030617819 |
申请日期 |
2003.07.14 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YAMASAKI HIDEAKI;HATANO TATSUO;MATSUDA TSUKASA;IKEDA TARO;NAKAMURA KAZUHITO;MATSUZAWA KOUMEI;KAWANO YUMIKO;TACHIBANA MITSUHIRO |
分类号 |
C23C16/16;H01L21/28;H01L21/285 |
主分类号 |
C23C16/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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