| 摘要 |
FIELD: hetero-structures are used for engineering semiconductor injection radiation sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers, which are used in fiber-optic communication and information transfer systems, in optical high speed computing and commutation systems, for engineering medical equipment, laser technological equipment, lasers with doubled frequency of generated radiation, and also for powering solid-body and fiber lasers and amplifiers. ^ SUBSTANCE: proposed are hetero-structure, injection laser, semiconductor amplifying element and semiconductor optical amplifier, particular in the way of active area manufacture and influx area of hetero-structure, complex selection of position, compositions, refraction coefficients and thicknesses of its layers, providing for efficient functioning of injection lasers, semiconductor amplifying elements and semiconductor optical amplifiers in transfer area of generation of controlled output of radiation from active layer. ^ EFFECT: modernization of hetero-structure, in particular, of the area of influx of radiation and active layer, for improving energetic and spatial characteristics of injection radiation sources, manufactured on basis of said hetero-structure. ^ 4 cl, 10 dwg |
