Multi-layer overlay measurement and correction technique for IC manufacturing

摘要

A system facilitating measurement and correction of overlay between multiple layers of a wafer is disclosed. The system comprises an overlay target that represents overlay between three or more layers of a wafer and a measurement component that determines overlay error existent in the overlay target, thereby determining overlay error between the three or more layers of the wafer. A control component can be provided to correct overlay error between adjacent and non-adjacent layers, wherein the correction is based at least in part on measurements obtained by the measurement component.