发明名称 |
Method to produce localized halo for MOS transistor |
摘要 |
Methods are discussed for forming a localized halo structure and a retrograde profile in a substrate of a semiconductor device. The method comprises providing a gate structure over the semiconductor substrate, wherein a dopant material is implanted at an angle around the gate structure to form a halo structure in a source/drain region of the substrate and underlying a portion of the gate structure. A trench is formed in the source/drain region of the semiconductor substrate thereby removing at least a portion of the halo structure in the source/drain region. A silicon material layer is then formed in the trench using an epitaxial deposition.
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申请公布号 |
US7064039(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20040785623 |
申请日期 |
2004.02.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LIU KAIPING |
分类号 |
H01L21/336;H01L21/265;H01L29/10 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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