发明名称 Digital memory circuit having a plurality of memory banks
摘要 A digital memory circuit has at least two pairs of adjacent memory banks. Each of the banks has n parallel terminals for n read/write data lines. Each bank pair has only two bundles of n/2 read/write data lines. A first bundle is assigned to the first half of a first bank and to a second half of a second bank and the second bundle is assigned to a second half of the first bank and to a first half of the second bank. Data are input/output in parallel to n/2 input/output lines with the timing of successive half-periods of a clock signal. A changeover device is changeable between different switching states for connecting a bundle of n/2 input/output lines to the read/write data lines of the bank pair containing the addressed bank, depending on whether the data are assigned to the first or second half-period of the clock signal.
申请公布号 US7064999(B2) 申请公布日期 2006.06.20
申请号 US20030342901 申请日期 2003.01.15
申请人 INFINEON TECHNOLOGIES AG 发明人 FISCHER HELMUT;MENCZIGAR ULLRICH;PFEIFFER JOHANN
分类号 G11C8/00;G11C7/10 主分类号 G11C8/00
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