发明名称 Buried array capacitor and microelectronic structure incorporating the same
摘要 A unitary buried array capacitor and microelectronic structures incorporating such capacitors are disclosed. A unitary buried array capacitor can be formed by a top layer of electrode, a middle layer of dielectric, and a bottom layer of electrode. A first electrode lead, a second electrode lead and at least one interconnect line pass through the three layers while only the first electrode lead making electrical contact with the top layer of electrode and only the second electrode lead making electrical contact with the bottom electrode.
申请公布号 US7064427(B2) 申请公布日期 2006.06.20
申请号 US20040863700 申请日期 2004.06.07
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHUNG STEPHEN;LEE JUNGLE;LAY SHINN-JUH;WU RANDY;CHANG HUEY-RU;CHENG YU-MEI
分类号 H01L23/04;H01L23/498;H01L23/50;H01L31/119;H05K1/11;H05K1/16;H05K3/46 主分类号 H01L23/04
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