发明名称 |
Method and structure of diode |
摘要 |
A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.
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申请公布号 |
US7064418(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20040781879 |
申请日期 |
2004.02.20 |
申请人 |
TOPPOLY OPTOELECTRONICS CORP. |
发明人 |
LI YING-HSIN;YANG SHENG-CHIEH;SHIH AN;KER MING-DOU;TSENG TANG-KUI;DENG CHIH-KANG |
分类号 |
H01L31/075;H01L29/861;H01L29/868;H01L31/105 |
主分类号 |
H01L31/075 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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