| 摘要 |
FIELD: physics of semiconductors, in particular, engineering of semiconductor nano-structures with quantum wells, possible use for realization of powerful semiconductor devices. ^ SUBSTANCE: semiconductor nanostructure contains quantum well with two-dimensional electron gas, made in form of layer of narrow-zoned semiconductor i-GaAs with forbidden zone Eg1 having thickness d1 and levels of dimensional quantizing Em1 - main and Ep1 - excited, sandwiched between two layers of semiconductor AlxGa1-xAs with forbidden zone Eg2>Eg1 and main level of dimensional quantizing Em2 having thickness d2 each, which is positioned between two barrier layers of wide-zoned semiconductor i-AlAs with thicknesses temperature and differentsp and forbidden zone Eg, one of which contains delta-Si layer of admixture at distance t* from hetero-boundary i-AlAs and i-AlxGa1-xAs, and second one consists of non-alloyed i-AlAs spacer and layer AlAs(Si) alloyed homogeneously by silicon and layer i-GaAs covering the nanostructure. In composite quantum well of semiconductor nanostructure, formed on poly-insulating substrate GaAs(Cr) in form of serial layers i-GaAs(buffer)/i-AlAs(delta-Si)/i-ALxGa1-xAs/i-GaAs/i-AlxGa1-xAs/i-AlAs. By special selection of parameters Eg>Eg2>Eg1 and relation d1/d2, condition Em2<Ep1 is maintained as well as localization of two-dimensional electrons with maximum in center of symmetry of composite quantum well on levels Em1 and Em2. ^ EFFECT: increased mobility of mut 2D electrons in quantum well with simultaneous increase of concentration nS. ^ 4 cl, 4 dwg |
