Flip chip light emitting diode with micromesas and a conductive mesh

摘要

A flip chip light emitting diode ( 12 ) includes a light-transmissive substrate ( 10 ) with a base semiconducting layer ( 40 ) disposed thereupon. A conductive mesh ( 18 ) is disposed on the base semiconducting layer ( 40 ) and is in electrically conductive contact therewith. Light-emitting micromesas ( 30 ) are disposed in openings ( 20 ) of the conductive mesh ( 18 ). Each light emitting micromesa ( 30 ) has a topmost layer ( 46 ) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode ( 14 ) is disposed on the base semiconducting layer ( 40 ) and is in electrical communication with the electrically conductive mesh ( 18 ). An insulating layer ( 60 ) is disposed over the electrically conductive mesh ( 18 ). A second conductivity type electrode layer ( 24 ) is disposed over the insulating layer ( 60 ) and the light-emitting micromesas ( 30 ). the insulating layer ( 60 ) insulates the second conductivity type electrode layer ( 24 ) from the electrically conductive mesh ( 18 ).