| 发明名称 |
Organic field effect transistor with off-set threshold voltage and the use thereof |
| 摘要 |
The invention relates to an organic field effect transistor with off-set threshold voltage. Said OFET has an intermediate layer that defines a space charge region between the insulator and the semiconductor.
|
| 申请公布号 |
US7064345(B2) |
申请公布日期 |
2006.06.20 |
| 申请号 |
US20040498610 |
申请日期 |
2004.06.10 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
FIX WALTER;ULLMANN ANDREAS |
| 分类号 |
H01L35/24;H01L51/05;H01L29/772;H01L29/78;H01L29/786;H01L51/00;H01L51/10;H01L51/30 |
主分类号 |
H01L35/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
