Growth method of nitride epitaxial layer using high temperature grown buffer layer,申请号KR20030068329-传众专利搜索

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发明名称	Growth method of nitride epitaxial layer using high temperature grown buffer layer
摘要
申请公布号	KR100590444(B1)	申请公布日期	2006.06.19
申请号	KR20030068329	申请日期	2003.10.01
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
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