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发明名称
蚀刻浅沟槽之前预先使矽或矽锗厚度递减之方法
摘要
一种用于在材料,例如矽材料中于蚀刻浅槽之前预先使材料中之图形厚度递减之方法,其系包含于该材料开一硬质罩,以在该材料中形成第一个预先厚度递减图形。该方法包含一个硬质罩过蚀刻步骤,其修正了该第一个预先厚度递减图形之外型,进而在材料中形成第二个预先厚度递减图形。在该预先厚度递减材料中形成浅沟渠隔离图形。
申请公布号
TW200620456
申请公布日期
2006.06.16
申请号
TW094128774
申请日期
2005.08.23
申请人
蓝姆研究公司
发明人
汤姆斯A. 坎波
分类号
H01L21/3065
主分类号
H01L21/3065
代理机构
代理人
陈长文
主权项
地址
美国
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