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发明名称
使用插脚上电容器之高速记忆体模组
摘要
一种用于制造记忆体模组之装置与方法,该等模组具有连接至一记忆体汇流排之多个分支,各分支含有经由至少一传输信号(TS)线及/或至少一次传输信号(STS)线连接至该记忆体汇流排之至少一动态随机存取记忆体(DRAM)装置或同步动态随机存取记忆体(SDRAM)装置。此等记忆体模组包括至少一分支,该至少一分支包含与TS线或STS线以及DRAM装置或SDRAM装置并联连接之一电容器。本发明亦讨论实现此等记忆体模组之一运算系统。
申请公布号
TW200619955
申请公布日期
2006.06.16
申请号
TW094121833
申请日期
2005.06.29
申请人
英特尔公司
发明人
王百宽;张吉
分类号
G06F13/40;G11C7/10
主分类号
G06F13/40
代理机构
代理人
恽轶群;陈文郎
主权项
地址
美国
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