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发明名称
METHOD OF FORMING A ISOLATION LAYER IN A SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20060066390(A)
申请公布日期
2006.06.16
申请号
KR20040104975
申请日期
2004.12.13
申请人
HYNIX SEMICONDUCTOR INC.
发明人
SONG, PIL GEUN;LEE, SEUNG CHEOL;PARK, SANG WOOK
分类号
H01L21/76;H01L21/304;H01L21/31
主分类号
H01L21/76
代理机构
代理人
主权项
地址
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