| 摘要 |
A semiconductor device such as a DPAM memory device is disclosed. A, Substrate ( 12 ) of semiconductor material is provided with energy band modifying means in the form of a box region ( 38 ) and is covered by an insulating layer ( 14 ). A semi-conductor layer ( 16 ) has source ( 18 ) and drain ( 20 ) regions formed therein to define bodies ( 22 ) of respective field effect transistors. The box region ( 38 ) is more heavily doped than the adjacent body ( 22 ), but less highly doped than the corresponding source ( 18 ) and drain ( 20 ), and modifies the valence and/or conduction band of the body ( 22 ) to increase the amount of electrical charge which can be stored in the body ( 22 ).
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