| 摘要 |
In a mass flow sensor having a layered structure on the upper side of a silicon substrate ( 1 ), and having at least one heating element ( 8 ) patterned out of a conductive layer in the layered structure, thermal insulation between the heating element ( 8 ) and the silicon substrate ( 1 ) is achieved by way of a silicon dioxide block ( 5 ) which is produced beneath the heating element ( 8 ) either in the layered structure on the silicon substrate ( 1 ) or in the upper side of the silicon substrate ( 1 ). As a result, the sensor can be manufactured by surface micromechanics, i.e. without wafer back-side processes.
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