发明名称 |
Magnetic random access memory device |
摘要 |
A magnetic random access memory device includes a digit line, a bit line, and a magnetic memory cell disposed in an intersection between the digit line and the bit line. The digit line is extended in a first direction on a substrate. The bit line is extended in a second direction on the substrate. The magnetic memory cell includes a rectangular free magnetic layer magnetized in a direction according to an externally applied magnetic field. A major axis of the rectangular free magnetic layer is substantially parallel to the first direction, and a minor axis of the rectangular free magnetic layer is substantially parallel to the second direction. Thus, multiple input/output program (write) operations and multiple input/output repair operations may be effectively performed.
|
申请公布号 |
US7061795(B2) |
申请公布日期 |
2006.06.13 |
申请号 |
US20040828894 |
申请日期 |
2004.04.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH HYUNG-ROK;CHO WOO-YEONG;KIM SU-YEON |
分类号 |
G11C11/00;G11C11/14;G11C11/15 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|