发明名称 |
Method for implanting ions into semiconductor substrate |
摘要 |
An ion implantation method for implanting ions into a side wall of a protruded semiconductor layer from a semiconductor substrate, the method includes applying an electric field to accelerate the ions in one direction and applying a magnetic field parallel to a plane extending at a predetermined angle with respect to the one direction, thereby controlling a direction of the ion implantation to the side wall.
|
申请公布号 |
US7060598(B2) |
申请公布日期 |
2006.06.13 |
申请号 |
US20040918515 |
申请日期 |
2004.08.12 |
申请人 |
SHARP KABUSHIKI KAISHA;MASUOKA FUJIO |
发明人 |
MASUOKA FUJIO;HORII SHINJI;TANIGAMI TAKUJI;YOKOYAMA TAKASHI |
分类号 |
H01L21/425;H01L21/265;H01L21/8247;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/425 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|