| 发明名称 |
STRAINED SILICON ON INSULATOR STRUCTURE AND THE FABRICATION METHOD OF THE SAME |
| 摘要 |
Provided is a strained SOI structure and a method of manufacturing the strained SOI structure. The strained SOI structure includes an insulating substrate, a SiO2 layer formed on the insulating substrate, and a strained silicon layer formed on the SiO2 layer. |
| 申请公布号 |
KR20060064304(A) |
申请公布日期 |
2006.06.13 |
| 申请号 |
KR20040103111 |
申请日期 |
2004.12.08 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, YOUNG SOO;WENXU XIANYU;TAKASHI NOGUCHI |
| 分类号 |
H01L21/20;H01L21/8238;H01L27/12 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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