| 摘要 |
An integrated circuit having copper interconnecting metallization ( 311, 312 ) protected by a first, inorganic overcoat layer ( 320 ), portions of the metallization exposed in windows ( 301, 302 ) opened through the thickness of the first overcoat layer. A patterned conductive barrier layer ( 330 ) is positioned on the exposed portion of the copper metallization and on portions of the first overcoat layer surrounding the window. A bondable metal layer ( 350, 351 ) is positioned on the barrier layer; the thickness of this bondable layer is suitable for wire bonding. A second, organic overcoat layer ( 360 ) is surrounding the window so that the surface ( 360 a) of this second overcoat layer at the edge of the window is at or above the surface ( 350 a) of the bondable layer. The second overcoat layer may be spaced ( 370 ) from the edge of the bondable metal layer.
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