发明名称 Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns on an object to be inspected
摘要 A pattern detection method and apparatus for inspecting, with high resolution, a micro fine defect of a pattern on an inspected object, and a semiconductor substrate manufacturing method and system with a high yield. A micro fine pattern on the inspected object is inspected by annular-looped illumination through an objective lens onto a wafer, the wafer having micro fine patterns thereon. The illumination may be polarized and controlled according to an image detected on the pupil of the objective lens, and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect. Simultaneously, micro fine defects on the micro-fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect.
申请公布号 US7061600(B2) 申请公布日期 2006.06.13
申请号 US20020098478 申请日期 2002.03.18
申请人 RENESAS TECHNOLOGY CORP. 发明人 MAEDA SHUNJI;NAKAYAMA YASUHIKO;YOSHIDA MINORU;KUBOTA HITOSHI;OKA KENJI
分类号 G01N21/00;G01N21/95;G01N21/956 主分类号 G01N21/00
代理机构 代理人
主权项
地址