Increased drive current by isotropic recess etch

摘要

A method ( 100 ) of forming a transistor includes forming a gate structure ( 108 ) over a semiconductor body and forming recesses ( 112 ) using an isotropic etch using the gate structure as an etch mask. The isotropic etch forms a recess in the semiconductor body that extends laterally in the semiconductor body toward a channel portion of the semiconductor body underlying the gate structure. The method further includes epitaxially growing silicon ( 114 ) comprising stress-inducing species in the recesses. The source and drain regions are then implanted ( 120 ) in the semiconductor body on opposing sides of the gate structure.