发明名称 |
Method for forming a junction region of a semiconductor device |
摘要 |
A method for forming a junction region of a semiconductor device is disclosed. The steps of the method include providing a semiconductor substrate. A gate structure is formed on the semiconductor substrate. A dopant is implanted into the semiconductor substrate to form the junction region. An insulator layer is formed on the gate structure and the semiconductor substrate. A carbon-containing plasma treatment is performed to the insulator layer. A spacer is formed on a side-wall of the gate structure and the dopant is implanted into the semiconductor substrate to form a source/drain region next to the junction region. A heat treatment is performed to the semiconductor substrate.
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申请公布号 |
US7060547(B2) |
申请公布日期 |
2006.06.13 |
申请号 |
US20040764437 |
申请日期 |
2004.01.27 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN YU-KUN;YANG NENG-HUI;CHIEN CHIN-CHENG;WANG HSIANG-YING |
分类号 |
H01L21/336;H01L21/225;H01L21/28;H01L21/4763;H01L29/49;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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