发明名称 |
Semiconductor device realized by using partial SOI technology |
摘要 |
A semiconductor substrate has a bulk region and a semiconductor region formed either on a buried insulating film or on a cavity region. The bulk region contains a plurality of memory cells, sense amplifiers and column selection gates, while the semiconductor region contains word line selection circuits and column selection circuits.
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申请公布号 |
US7061814(B2) |
申请公布日期 |
2006.06.13 |
申请号 |
US20040822673 |
申请日期 |
2004.04.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAMEKAWA TOSHIMASA;MIYANO SHINJI;SUZUKI ATSUSHI |
分类号 |
G11C7/00;G11C11/401;G11C11/407;H01L21/8242;H01L27/02;H01L27/108 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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