| 发明名称 |
Interconnect structure for use in an integrated circuit |
| 摘要 |
A copper interconnect structure is disclosed as comprising a copper layer and an aluminum nitride layer formed over the copper layer. The aluminum nitride layer passivates the copper layer surface and enhances the thermal conductivity of a semiconductor substrate by radiating heat from the substrate as well as from the copper layer. |
| 申请公布号 |
US7061111(B2) |
申请公布日期 |
2006.06.13 |
| 申请号 |
US20000547926 |
申请日期 |
2000.04.11 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MCTEER ALLEN |
| 分类号 |
H01L23/52;H01L23/522;H01L21/318;H01L21/3205;H01L21/768;H01L23/367;H01L23/532 |
主分类号 |
H01L23/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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