发明名称 |
OXIDE-NITRIDE STACK GATE DIELECTRIC |
摘要 |
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
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申请公布号 |
KR20060063978(A) |
申请公布日期 |
2006.06.12 |
申请号 |
KR20067006268 |
申请日期 |
2006.03.30 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
RAMKUMAR KRISHNASWAMY;NARAYANAN SUNDAR |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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