发明名称 PLASMA PROCESSING METHOD AND APPARATUS
摘要 [PROBLEMS] In a plasma processing, the range of a supply frequency to between electrodes is set such that a stable discharge and a high output efficiency can be achieved. [MEANS FOR SOLVING PROBLEMS] In a plasma processing apparatus, there are provided a secondary coil (22b) of a transformer (22) that boosts a power supply voltage; and an electrode circuit (1) comprising a pair of electrodes (11, 12) opposed to each other. There is also provided a solid dielectric (13) on the opposing surface of at least one of the electrodes (11,12). The electrode circuit (1) constitutes an LC series resonant circuit comprising a leakage inductance of the secondary coil and a capacitance of the electrodes. The supply frequency to the electrode circuit (1) is set between the resonant frequency during non-discharging and the resonant frequency during a period when the spacing (10p) between the electrodes can be regarded as a conductor.
申请公布号 KR20060064047(A) 申请公布日期 2006.06.12
申请号 KR20067000580 申请日期 2006.01.10
申请人 SEKISUI CHEMICAL CO., LTD. 发明人 KOUZUMA MAKOTO;KOMIYA HIROMI
分类号 H05H1/24;H01J37/32;H01L21/02;H01L21/3065;H05H1/46 主分类号 H05H1/24
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