MOS TRANSISTOR OF FIN STRUCTURE HAVING RECESSED CHANNEL AND FABRICATION METHOD THEREOF,申请号KR20040101344-传众专利搜索

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发明名称	MOS TRANSISTOR OF FIN STRUCTURE HAVING RECESSED CHANNEL AND FABRICATION METHOD THEREOF
摘要
申请公布号	KR20060062488(A)	申请公布日期	2006.06.12
申请号	KR20040101344	申请日期	2004.12.03
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, BYUNG YOON
分类号	H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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