| 摘要 |
4(a)-4(e), a plurality of semiconductor devices (142) and passive devices (144) are fixed to a base (140), then an insulating resin film (123) with conductive film composed of a conductive film (120) and an insulating resin film (122) is pressed against the base (140) so that the semiconductor devices (142) and the passive devices (144) are pushed into the insulating resin film (122), and the base (140) and the insulating resin film (123) are contact- bonded under vacuum or a reduced pressure. Following that, the base (140) is separated from the insulating resin film (122), and a via (121) is formed and the conductive film (120) is patterned. Consequently, there can be obtained a structure (125) wherein one side of each semiconductor device (142) and passive device (144) is sealed with the insulating resin film (122) while the other side of each device is exposed. |
